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Home Nanoscale

UNIST to Provide a Promising Direction for Future 2D Electronics

Witnessing triangular hole growth processes in hBN monolayers.

Prof. Zonghoon Lee's research team is posing for a group photo in front of the Advanced Transmission Electron Microscopy at UNIST. From left are Jongyeong Lee, Prof. Lee, GyeongHee Ryu, and HyoJu Park.

2D layered materials, such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention for potential applications in 2D materials due to their excellent thermal and mechanical properties. Moreover, hBN, also known as... Read More

Jul 15, 2015 By JooHyeon Heo Research
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