UNIST has collaborated with domestic and international experts alongside the Institute of Electrical and Electronics Engineers (IEEE), the Electron Devices Society (EDS), and the Korean Society of Semiconductor and Display Technology (KSDT) to advance next-generation semiconductor technology.
Organized by the UNIST Graduate School of Semiconductors Materials and Devices Engineering, the 22nd Non-Volatile Memory Technology Symposium (NVMTS 2024) took place at Paradise Hotel Busan from October 20 to 23, 2024. This event gathered experts from around the world to discuss the future of semiconductor technology.
The conference featured 35 international speakers and attracted over 250 attendees, including scholars and industry professionals from leading companies, such as Samsung Electronics, SK Hynix, and Micron Technology. Presentations focused on next-generation semiconductor devices, including Flash, MRAM, PCRAM, RRAM, and FeRAM, and highlighted innovative processes and system applications designed to enhance memory speed and efficiency.
Participants of NVMTS 2024 had the opportunity to experience the latest advancements in semiconductor technology at various corporate booths. Additionally, a poster session showcased research findings from students specializing in related fields, fostering vibrant discussions and the exchange of ideas among future leaders.
In his welcoming remarks, Professor Hongsik Jeong of the Graduate School of Semiconductors Materials and Devices Engineering at UNIST addressed the technical challenges currently facing the memory industry. “In today’s memory sector, Moore’s Law—the principle that semiconductor performance doubles at regular intervals—has reached its limits,” he stated. “This conference serves as a platform to address these challenges through new non-volatile memory technologies, drawing from cutting-edge research in both academia and industry.”