A team of researchers at UNIST, led by Prof. Kyung Rok Kim (School of Electrical and Computer Engineering) has pioneered in developing a new class of semiconductor device that is faster and more energy efficient.
According to the team, this FinFET-based high electron mobility transistor with strained silicon channel (FinHEMT) can be used as high-performance, low-power transistor with high on-current and low off-current. Moreover, when tested, the electron mobility in s-Si channel of FinHEMT is enhanced 5 times larger than that of FinFET.
Besides, on September 8, 2015, Prof. Kim and his research team were named among a select group of the Nanoscale Horizons poster prize winners at the 15th International Conference on Nanotechnology (IEEE NANO). This year’s conference took place at the Angelicum Congress Centre, Rome, Italy from July 27 through 30th, featuring plenary and invited talks from the world most renowned scientists and engineers.
The winning abstract was titled “FinHEMT: FinFET-based High Electron Mobility Transistor with Strained Silicon Channel”. Their work has been published by IEEE Press, included in IEEE Xplore and Indexed by EI. It will be also considered for publication on IEEE Electron Device Letters.
This work has been supported by Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning.
