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Home Changwook Jeong

Breakthrough in 2D Semiconductor Materials Paves the Way for Next-Gene Ultra-Scaled Chips

The findings of this research have been published in ACS Nano on November 4, 2025.

Breakthrough in 2D Semiconductor Materials Paves the Way for Next-Gene Ultra-Scaled Chips

Abstract The demand for low contact resistance in two-dimensional (2D) nanoelectronics has positioned semimetals as ideal contact materials, owing to their ability to minimize the formation of metal-induced gap states (MIGS). While the cont... Read More

Dec 01, 2025 By JooHyeon Heo Research
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UNIST Researchers Uncover Causes of Overestimated Semiconductor Performance Metrics

Published in the October 2025 issue of ACS Nano, this study reveals up to a 30-fold overestimation of charge mobility.

UNIST Researchers Uncover Causes of Overestimated Semiconductor Performance Metrics

Abstract Amorphous oxide semiconductor-based thin-film transistors (oxide TFTs) were first demonstrated in 2004. These devices offer numerous advantages, including low-temperature processing, high carrier mobility, and ultralow off-current.... Read More

Nov 12, 2025 By JooHyeon Heo Research
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New Study Unveils Revolutionary Thin Film Deposition Process for Tin Selenide-Based Materials

The research findings were published online in Advanced Materials on April 10, 2024.

New Study Unveils Revolutionary Thin Film Deposition Process for Tin Selenide-Based Materials

Abstract Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, sy... Read More

May 09, 2024 By JooHyeon Heo Research
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