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Home Defects

New Study Shows Domain Walls in Ferroelectrics Can Be the Most Stable State, Enabling High-Density Memory

The findings were published in the prestigious journal Physical Review Letters on April 22, 2025.

New Study Shows Domain Walls in Ferroelectrics Can Be the Most Stable State, Enabling High-Density Memory

Abstract Charged domain walls (CDWs) in ferroelectrics are often characterized as excited states, even after full bound charge compensation at domain walls (DWs). Here, we propose a mechanism where negative gradient energy (grad) counteract... Read More

May 22, 2025 By JooHyeon Heo Research
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Breakthrough in Semiconductor Defect Removal Supports Smaller, Faster, Low-Power Chips

Their findings have been published in ACS Nano on February 18, 2025.

Breakthrough in Semiconductor Defect Removal Supports Smaller, Faster, Low-Power Chips

Abstract Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect transistors (FETs) due to its immunity to short-channel effects by dangling bond-free surface... Read More

Mar 31, 2025 By JooHyeon Heo Research
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Theoretical Study of Oxygen Reduction Reaction Mechanism in Metal-Free Carbon Materials

Their findings have been published in the October 2022 issue of ACS Nano.

Theoretical Study of Oxygen Reduction Reaction Mechanism in Metal-Free Carbon Materials

Abstract Metal-free carbon materials are attractive Pt-based catalyst alternatives. However, despite efforts, the reaction mechanism remains elusive. Thus, we investigated the role of defects (dopant nitrogen and carbon vacancy) on the cata... Read More

Jan 03, 2023 By JooHyeon Heo Research
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  • Two Faculty Members Awarded Minister of Education Commendation

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    Dec 18, 2025
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    Dec 18, 2025
  • UNIST Featured in Nature Branded Content on AI-Driven Clean Energy Innovation

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    Dec 14, 2025

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