Abstract Charged domain walls (CDWs) in ferroelectrics are often characterized as excited states, even after full bound charge compensation at domain walls (DWs). Here, we propose a mechanism where negative gradient energy (grad) counteract... Read More
Abstract Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect transistors (FETs) due to its immunity to short-channel effects by dangling bond-free surface... Read More
Abstract Metal-free carbon materials are attractive Pt-based catalyst alternatives. However, despite efforts, the reaction mechanism remains elusive. Thus, we investigated the role of defects (dopant nitrogen and carbon vacancy) on the cata... Read More
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