A research team, led by Professor Jongeun Lee from the Department of Electrical Engineering at UNIST has been honored with the Minister’s Commendation from the Ministry of Trade, Industry and Energy (MOTIE) at the 26th Korea Semicondu... Read More
Abstract This work presents an output-capacitor-less digital-assisted analog low-dropout regulator digital-assisted analog LDO (DA-ALDO) that employs a seamless digital-to-analog transfer (D2A-TF) technique enabled by a local ground generat... Read More
Team FAST (Future Autonomous Systems Team), led by Professor Jeong Hwan Jeon from the Department of Electrical Engineering at UNIST, has achieved a remarkable victory at Korea’s largest autonomous driving competition. The team progres... Read More
Abstract Nonlinear intersubband polaritonic metasurfaces based on coupling of the intersubband nonlinear optical response of quantum-engineered semiconductor heterostructures and electromagnetic modes of nanoresonators provide efficient fre... Read More
Two early-career researchers at UNIST have been selected for the prestigious ‘Post-Doc Growth-Oriented Research Support (name tentative)‘ program, jointly funded by the Ministry of Education and the National Research Foundation... Read More
Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work d... Read More
Abstract Broadband and ultrathin electromagnetic interference (EMI)-shielding materials are crucial for efficient high-frequency data transmission in emerging technologies. MXenes are renowned for their outstanding electrical conductivity a... Read More
A team, led by Professor Jeong Hwan Jeon from the Department of Electrical Engineering at UNIST has achieved an impressive third place in the 2025 Hyundai Motor Group (HMG) Autonomous Driving Challenge, held on April 27 at COEX, Seoul. This... Read More
Abstract Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect transistors (FETs) due to its immunity to short-channel effects by dangling bond-free surface... Read More
Dean Jae-Young Sim of the UNIST Graduate School of Artificial Intelligence (AIGS) has been honored with a commendation from the Minister of Science and ICT (MSIT) for his significant contributions to the development of the AI field by culti... Read More
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