Abstract Atomic layer modulation (ALM) presents a novel approach for controlling the stoichiometry of platinum-ruthenium (PtRu) alloys rather than a tedious atomic layer deposition (ALD) supercycling multielement ALD process. This method se... Read More
UNIST is pleased to announce the successful participation of its Graduate School of Semiconductor Materials and Devices Engineering students in the ‘2025 Future Chips Academy: The Netherlands-Korea Joint Education Program on Cutting-E... Read More
Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work d... Read More
Abstract Broadband and ultrathin electromagnetic interference (EMI)-shielding materials are crucial for efficient high-frequency data transmission in emerging technologies. MXenes are renowned for their outstanding electrical conductivity a... Read More
Abstract Charged domain walls (CDWs) in ferroelectrics are often characterized as excited states, even after full bound charge compensation at domain walls (DWs). Here, we propose a mechanism where negative gradient energy (grad) counteract... Read More
UNIST has announced that its faculty-led startup company, BlueMagnet Inc., founded by Professor Ki-Suk Lee from the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has been selected for TIPS, an accelerator inve... Read More
On May 24, UNIST announced that it has received a generous donation of 10 million won has from PeDiSem Co., Ltd. The donation will be used to support the cultivation of high-caliber talents in the semiconductor industry. A donation ceremony... Read More
Abstract Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, sy... Read More
On April 8, UNIST held its annual ‘Outstanding Faculty Awards‘ ceremony to shine a spotlight on the exceptional accomplishments of its faculty members throughout the 2023 academic year. The Outstanding Faculty Awards aim to ackn... Read More
Abstract High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization pr... Read More
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