Abstract Multielement nanostructures promise unusual properties but are constrained by crystalline frameworks limiting incorporable cations, and prevailing syntheses rely on harsh conditions restricting practicality. Here we introduce a CO2... Read More
Abstract The demand for low contact resistance in two-dimensional (2D) nanoelectronics has positioned semimetals as ideal contact materials, owing to their ability to minimize the formation of metal-induced gap states (MIGS). While the cont... Read More
Abstract Amorphous oxide semiconductor-based thin-film transistors (oxide TFTs) were first demonstrated in 2004. These devices offer numerous advantages, including low-temperature processing, high carrier mobility, and ultralow off-current.... Read More
Abstract Atomic layer deposition (ALD) is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control. Al-doped TiO2 (ATO) is a promising high-k dielectric for dynamic ra... Read More
UNIST has taken a significant leap forward in strengthening its semiconductor education and research capabilities. This advancement comes through a generous donation from Metariver Technology Co., Ltd., which has provided state-of-the-art s... Read More
Abstract Atomic layer modulation (ALM) presents a novel approach for controlling the stoichiometry of platinum-ruthenium (PtRu) alloys rather than a tedious atomic layer deposition (ALD) supercycling multielement ALD process. This method se... Read More
UNIST is pleased to announce the successful participation of its Graduate School of Semiconductor Materials and Devices Engineering students in the ‘2025 Future Chips Academy: The Netherlands-Korea Joint Education Program on Cutting-E... Read More
Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work d... Read More
Abstract Broadband and ultrathin electromagnetic interference (EMI)-shielding materials are crucial for efficient high-frequency data transmission in emerging technologies. MXenes are renowned for their outstanding electrical conductivity a... Read More
Abstract Charged domain walls (CDWs) in ferroelectrics are often characterized as excited states, even after full bound charge compensation at domain walls (DWs). Here, we propose a mechanism where negative gradient energy (grad) counteract... Read More
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