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Home Graduate School of Semiconductor Materials and Devices Engineering

UNIST Researchers Uncover Causes of Overestimated Semiconductor Performance Metrics

Published in the October 2025 issue of ACS Nano, this study reveals up to a 30-fold overestimation of charge mobility.

UNIST Researchers Uncover Causes of Overestimated Semiconductor Performance Metrics

Abstract Amorphous oxide semiconductor-based thin-film transistors (oxide TFTs) were first demonstrated in 2004. These devices offer numerous advantages, including low-temperature processing, high carrier mobility, and ultralow off-current.... Read More

Nov 12, 2025 By JooHyeon Heo Research
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Researchers Develop Innovative Process to Enhance Semiconductor Device Performance

The findings of this research were published in the September 2025 edition of International Journal of Extreme Manufacturing.

Researchers Develop Innovative Process to Enhance Semiconductor Device Performance

Abstract Atomic layer deposition (ALD) is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control. Al-doped TiO2 (ATO) is a promising high-k dielectric for dynamic ra... Read More

Oct 26, 2025 By JooHyeon Heo Research
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Metariver Donates KRW 4 Billion Worth of Semiconductor SW to UNIST

The signing ceremony for the memorandum of understanding (MOU) was held on September 18, 2025.

Metariver Donates KRW 4 Billion Worth of Semiconductor SW to UNIST

UNIST has taken a significant leap forward in strengthening its semiconductor education and research capabilities. This advancement comes through a generous donation from Metariver Technology Co., Ltd., which has provided state-of-the-art s... Read More

Sep 19, 2025 By JooHyeon Heo News
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Researchers Unveil Innovative Deposition Technology for Uniform Metal Alloys at the Atomic Scale

Their findings were published online in Advanced Science on May 28, 2025.

Researchers Unveil Innovative Deposition Technology for Uniform Metal Alloys at the Atomic Scale

Abstract Atomic layer modulation (ALM) presents a novel approach for controlling the stoichiometry of platinum-ruthenium (PtRu) alloys rather than a tedious atomic layer deposition (ALD) supercycling multielement ALD process. This method se... Read More

Jul 11, 2025 By JooHyeon Heo Research
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UNIST Takes Part in 2025 Korea-Netherlands Advanced Semiconductor Initiative

The '2025 Future Chips Academy' took place from June 16 to 20 in Eindhoven, Netherlands.

UNIST Takes Part in 2025 Korea-Netherlands Advanced Semiconductor Initiative

UNIST is pleased to announce the successful participation of its Graduate School of Semiconductor Materials and Devices Engineering students in the ‘2025 Future Chips Academy: The Netherlands-Korea Joint Education Program on Cutting-E... Read More

Jul 01, 2025 By JooHyeon Heo News
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Revolutionary Low-Power, Non-Volatile Wireless Communication Semiconductor Developed for 6G and Autonomous Vehicles

The findings of this research have been published in Advanced Science on May 28, 2025.

Revolutionary Low-Power, Non-Volatile Wireless Communication Semiconductor Developed for 6G and Autonomous Vehicles

Abstract Vanadium oxide (VOx) based memristor is a promising candidate for next-generation non-volatile memory and radio-frequency (RF) switches due to its compatibility with wafer-level integration and high-frequency operation. This work d... Read More

Jun 30, 2025 By JooHyeon Heo Research
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MXene, One-Tenth Hair Thickness, Offers Exceptional High-Frequency EMI Shielding

The findings of this research were published in the renowned journal Advanced Materials on April 25, 2025.

MXene, One-Tenth Hair Thickness, Offers Exceptional High-Frequency EMI Shielding

Abstract Broadband and ultrathin electromagnetic interference (EMI)-shielding materials are crucial for efficient high-frequency data transmission in emerging technologies. MXenes are renowned for their outstanding electrical conductivity a... Read More

May 30, 2025 By JooHyeon Heo Research
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New Study Shows Domain Walls in Ferroelectrics Can Be the Most Stable State, Enabling High-Density Memory

The findings were published in the prestigious journal Physical Review Letters on April 22, 2025.

New Study Shows Domain Walls in Ferroelectrics Can Be the Most Stable State, Enabling High-Density Memory

Abstract Charged domain walls (CDWs) in ferroelectrics are often characterized as excited states, even after full bound charge compensation at domain walls (DWs). Here, we propose a mechanism where negative gradient energy (grad) counteract... Read More

May 22, 2025 By JooHyeon Heo Research
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BlueMagnet Inc. Secures TIPS Funding to Advance Eco-Friendly Magnetic Technology

This recognition will provide BlueMagnet Inc. with KRW 500 million in funding over the next two years.

BlueMagnet Inc. Secures TIPS Funding to Advance Eco-Friendly Magnetic Technology

UNIST has announced that its faculty-led startup company, BlueMagnet Inc., founded by Professor Ki-Suk Lee from the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has been selected for TIPS, an accelerator inve... Read More

Mar 06, 2025 By JooHyeon Heo People
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PeDiSem Co., Ltd. Makes Charitable Donation to UNIST!

The donation ceremony took place at the Haedong Faculty Lounge of UNIST on May 24, 2024.

PeDiSem Co., Ltd. Makes Charitable Donation to UNIST!

On May 24, UNIST announced that it has received a generous donation of 10 million won has from PeDiSem Co., Ltd. The donation will be used to support the cultivation of high-caliber talents in the semiconductor industry. A donation ceremony... Read More

May 27, 2024 By JooHyeon Heo News
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