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Home Zonghoon Lee

Atomic Transistors Based on Seamless Lateral Metal-semiconductor Junctions with Sub-1-nm Transfer Length

Their findings have been published in the August 2022 issue of Nature Communications.

Atomic Transistors Based on Seamless Lateral Metal-semiconductor Junctions with Sub-1-nm Transfer Length

Abstract The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are the... Read More

Oct 28, 2022 By JooHyeon Heo Research
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New Mode of Materials Growth, “Spiral Growth Graphene” Has Been Discovered

The work by Distinguished Professor Feng Ding from IBS CMCM at UNIST has been appeared in Advanced Materials on January 19, 2022.

New Mode of Materials Growth, “Spiral Growth Graphene” Has Been Discovered

In history, the synthesis of key materials, such as bronze, steel, polymer, and silicon, represents the most advanced technology of human society. Until now, the discovery of a new material and the development of materials highly depends on... Read More

May 02, 2022 By JooHyeon Heo Research
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An Ultimate One-dimensional Electronic Channel In Hexagonal Boron nitride

Their findings have been published in Science Advances on March 6, 2020.

A zero bandgap boundary discovered in insulating hexagonal boron nitride sheets with could pave the way for new nano-electronic devices.

An Ultimate One-dimensional Electronic Channel In Hexagonal Boron nitride

In the field of 2D electronics, the norm used to be that graphene is the main protagonist and hexagonal boron nitride (hBN) is its insulating passive support. An international team of researchers, affiliated with UNIST, has made a discovery... Read More

Mar 11, 2020 By Dahee Carol Kim Research
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